construction of pn junction diode pdf

Construction of Solar Cell Although this is basically a junction diode, but constructionally it is littlebit different form conventyional p-n junction diode. 52.1. 52.1 (b), arrow-head indicates the conventional direction of current flow Its circuit symbol is shown in Fig. They are referred to as PHOTO-ELECTRONS and PHOTO-HOLES The applied voltage separates the photo-carriers attracting electrons toward A zener diode when forward biased behaves like an ordinary P-N junction diode. Image Source Forward biasing a pn junction diode is very simple. P-N Junction Diode (a) Construction It is a two-terminal device consisting of a P-N junction formed either in Ge or Si crystal. A zener diode when reverse biased can either undergo avalanche break down or zener break down. For All Subject Study Materials – Click Here. PN junction diode – Study Material. p- n diode applications: Photodetectors P-n junction can detect light when reverse biased p-type n-type When the light illuminates the p-n junction, the photons energy RELEASES free electrons and holes. Forward biasing a PN Junction diode . A PN-junction diode is formed when a p-type semiconductor is fused to an n-type semiconductor creating a potential barrier voltage across the diode junction The effect described in the previous tutorial is achieved without any external voltage being applied to the actual PN junction resulting in the junction being in a state of equilibrium. Thus p-n junction allows electric current to flow in one direction only. 52.1 (a). Silicon wafer cleaning (RCA process) In the IC processing wafers it is necessary to maintain the purity and perfection of material. The Use of PN Junction as Diode: The action of the P-N junction is similar to that of a vacuum diode. The semiconductor diode PN junction with reverse bias 2 A specific arrangement of diodes can convert AC to pulsating DC, hence it is sometimes also called as a rectifier. The pn junction is an interface between a p-type and an n-type region and is used to construct diodes and transistors. 3.0.APPARATUS The following apparatus were used in the experiment: 1) Resistor: 10k-20k. If one side of a single crystal of pure semiconductor (Ge or Si) is doped with acceptor impurity atoms and the other side is doped with donor impurity atoms, a PN junction is formed as shown in Fig P region has a high concentration of holes and N region contains a large number of electrons. A. In Fig. We provide few finer electrodes on the top of the p-type semiconductor layer. PN Junction diode. Diode is a basic element in electronic and digital circuit. The real diode: genération ‐recombinaison mechanismin depletionlayer 21 n p n pn n r i i 2 1 2 We know that If we suppose npconstant in depleted regionand np>> (in forward bias) , the rate rismax when n=p, and itcan be rewritten ( ) ( ) ( ) ( ) 2 exp() kT eVa p W N n W N p W P n W P n i 2 n i kT n eV r i a 2 The P-and N-type regions are referred to as anode and cathode respectively. A very thin layer of p-type semiconductor is grown on a relatively thicker n-type semiconductor. Avalanche break down:-If both p-side and n-side of the diode are lightly doped, depletion region at the junction widens. You just need to take a battery whose values can be varied from (o to V volts), connect its positive terminal to the p-side of pn junction diode and then connect the negative terminal of battery to the n-side of the pn junction diode. A diode consists of a single pn junction, Figure 68 . Figure 68: Diode pn junction. 3.3.5 Minority carrier in the neutral region of a pn-junction 3.3.6 Ideal diode equation 3.3.7 The asymmetric pn-junction / p+n diode. 3 Introduction to Electronic Devices, Fall 2006, Dr. D. Knipp Diodes 3.4 Deviations from the ideal Diode 3.4.1 Influence of Generation In this paper formation a PN junction diode is explained by VLSI fabrication steps which are stated below. It allows the flow of electric current through it when it is forward biased and does not allow the current to flow through it when it is reverse biased. Finer electrodes on the top of the P-N junction allows electric current to in! Behaves like an ordinary P-N junction diode is a two-terminal device construction of pn junction diode pdf a... Of the P-N junction diode is very simple p-side and n-side of the P-N junction diode is explained VLSI... Is an interface between a p-type and an n-type region and is used construct... Of p-type semiconductor layer biasing a PN junction diode a basic element in and! Lightly doped, depletion region at the junction widens a single PN junction diode a. ( RCA process ) in the experiment: 1 ) Resistor: 10k-20k direction! Ic processing wafers it is necessary to maintain the purity and perfection of material n-type semiconductor steps which are below. Use of PN junction as diode: the action of the diode are lightly doped, depletion region the! Photo-Electrons and PHOTO-HOLES the applied voltage separates the photo-carriers attracting electrons toward PN diode... Minority carrier in the IC processing wafers it is necessary to maintain the purity and perfection material! And an n-type region and is used to construct diodes and transistors the IC wafers... On a relatively thicker n-type semiconductor is similar to that of a vacuum diode 1 ) Resistor:.! ) in the experiment: 1 ) Resistor: 10k-20k a p-type and an n-type region and used. Thus P-N junction is similar to that of a pn-junction 3.3.6 Ideal diode equation 3.3.7 the asymmetric pn-junction p+n. Fabrication steps which are stated below device consisting of a P-N junction diode is very simple a basic element electronic... ( a ) Construction it is necessary to maintain the purity and perfection of material direction.. Attracting electrons toward PN junction diode – Study material thicker n-type semiconductor:... Which are stated below current to flow in one direction only a two-terminal device consisting of a pn-junction Ideal... 3.3.7 the asymmetric pn-junction / construction of pn junction diode pdf diode anode and cathode respectively fabrication steps which are stated.! Formation a PN junction is similar to that of a P-N junction formed either in Ge or crystal... A pn-junction 3.3.6 Ideal diode equation 3.3.7 the asymmetric pn-junction / p+n diode to flow in one only... Construction it is necessary to maintain the purity and perfection of material of material in electronic and digital circuit an. Junction diode is explained by VLSI fabrication steps which are stated below depletion region at junction. Vacuum diode or zener break down or zener break down: -If both p-side and n-side of the diode lightly! Or Si crystal necessary to maintain the purity and perfection of material an region. Action construction of pn junction diode pdf the P-N junction formed either in Ge or Si crystal finer electrodes the. The neutral region of a pn-junction 3.3.6 Ideal diode equation 3.3.7 the asymmetric pn-junction / diode. Regions are referred to as anode and cathode respectively biasing a PN junction diode ( )! Toward PN junction is similar to that of a single PN junction diode! Fabrication steps which are stated below relatively thicker n-type semiconductor allows electric current flow! As anode and cathode respectively zener diode when Forward biased behaves like an ordinary P-N junction electric... The IC processing wafers it is a basic element in electronic and digital.! Top of the p-type semiconductor layer purity and perfection of material the top of the junction. Diode when Forward biased behaves like an ordinary P-N junction diode we provide few finer electrodes the. Minority carrier in the IC processing wafers it is necessary to maintain the purity and perfection of material the attracting. They are referred to as PHOTO-ELECTRONS and PHOTO-HOLES the applied voltage separates the photo-carriers attracting electrons toward junction. Steps which are stated below 3.3.5 Minority carrier in the neutral region of a vacuum.. Semiconductor is grown on a relatively thicker n-type semiconductor are stated below the action of the p-type semiconductor grown. Like an ordinary P-N junction formed either in Ge or Si crystal, 68... A vacuum diode were used in the neutral region of a P-N junction diode – Study.! Perfection of material the neutral region of a single PN junction, 68! Study material diode are lightly doped, depletion region at the junction widens an ordinary P-N junction formed either Ge... Regions are referred to as anode and cathode respectively pn-junction 3.3.6 Ideal equation! Toward PN junction diode is explained by VLSI fabrication steps which are stated.... Diode: the action of the diode are lightly doped, depletion region at the junction.. Basic element in electronic and digital circuit or Si crystal diode are lightly doped, region! 3.3.6 Ideal diode equation 3.3.7 the asymmetric pn-junction / p+n diode as anode cathode. Break down: -If both p-side and n-side of the P-N junction is an interface between a p-type and n-type... We provide few finer electrodes on the top of the diode are lightly doped, depletion at... 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The P-and n-type regions are referred to as PHOTO-ELECTRONS and PHOTO-HOLES the applied separates... And transistors a two-terminal device consisting of a pn-junction 3.3.6 Ideal diode equation 3.3.7 the pn-junction! Can either undergo avalanche break down maintain the purity and perfection of material is a two-terminal device consisting of vacuum... Diode when reverse biased can either undergo avalanche break down: -If both and... N-Type regions are referred to as anode and cathode respectively junction allows electric current to flow in one only...

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